Presentation Information
[24p-P16-7]Remote hetero epitaxy of α-Ga2O3 by mist CVD method
〇(M1C)Shoki Kanda1, Kentaro Kaneko2, Shinichiro Mouri1 (1.Ritsumeikan Univ. Col. of Sci. & Eng., 2.Ritsumeikan Univ. ROST)
Keywords:
remote epitaxy,gallium oxide,graphene
In this study, α-Ga2O3 thin film, which is attracting attention as a power semiconductor material, was transferred to graphene on a c-sapphire substrate and grown by mist CVD method in order to exfoliate α-Ga2O3 from the substrate using remote epitaxy method. Optimization of growth parameters showed that suppression of oxygen flow rate contributed to the effective growth of α-Ga2O3 flat thin films.