Presentation Information

[24p-P16-8]Consideration of deposition conditions of buffer layers for preparation of ZnO (1120) films on single crystal NdGaO₃ (001) substrates by a RF sputtering method

〇(B)Ryo Otoguro¹, Koji Kawasaki¹, Mio Sakuma¹, Jun Suzuki¹, Yuji Imai¹, Takami Abe², Yasube Kashiwaba², Hiroshi Osada², Yasuhiro Kashiwaba¹ (1.Nat. Inst. Tech., Sendai College, 2.Iwate Univ)

Keywords:

zinc oxide,buffer layer,RF sputtering

Deposition conditions of buffer layers for preparetion of ZnO (1120) films on single crystal NdGaO₃ (001) substrates were considered. ZnO (1120) films were deposited by using a RF sputtering method. The result of XRD measurements indicated that the thermal energy of the RF sputtering is important to prepare ZnO (1120) films.

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Presentation Information

[24p-P16-8]Consideration of deposition conditions of buffer layers for preparation of ZnO (1120) films on single crystal NdGaO3 (001) substrates by a RF sputtering method

Keywords:

[24p-P16-8]Consideration of deposition conditions of buffer layers for preparation of ZnO (1120) films on single crystal NdGaO₃ (001) substrates by a RF sputtering method