[25a-12J-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[25a-12J-10] Effect of Random Potential on Subthreshold Characteristics of MOSFETs

〇Nobuya Mori¹ (1.Osaka Univ.)

Keywords:

semiconductor,MOSFET,subthreshold characteristics

It has been reported that the subthreshold coefficient saturates at cryogenic temperatures. One model that explains this phenomenon is one that assumes an exponential tail in the density of states of a two-dimensional electron gas. On the other hand, in bulk semiconductors, random potentials have been shown to lead to exponential tail states. In this study, we investigate the effect of random potentials on the two-dimensional electronic states