The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[25a-12J-1~11]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Mon. Mar 25, 2024 9:00 AM - 12:00 PM JST
Mon. Mar 25, 2024 12:00 AM - 3:00 AM UTC
12J (Building No. 1)
Takashi Hasunuma(Univ. of Tsukuba), Hajime Tanaka(阪大)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[25a-12J-1]Mechanism for improving narrow space loading using organic solvents

〇Yuki Yoshida1, Takeo Nakano2, Sangita Kumari3, Shan Hu3, Peter Delia3 (1.TEL kyushu, 2.TEL Technology Solutions, 3.TEL Technology Center, America)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-12J-2]Reactive Molecular Dynamics Study of Silicon Dioxide Etching by Fluoride Ions

〇(B)Seina Goto1,2, Naoya Uene2, Takashi Tokumasu2 (1.School of Eng., Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-12J-3]Operand Lab._HAXPES Evaluation of MOS Structure with Different Dopant Concentrations in the Substrate.

〇Takuya Minowa1, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[25a-12J-4]Influence of HfN0.5 gate electrode thickness on the ferroelectric characteristics of hafnium nitride formed on Si(100)

〇KANGBAI LI1, Ide Akinori1, Hamada Kaimu1, Sekiguchi Yuki1, Ohmi Shun-ichiro1 (1.Tokyo Inst.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-12J-5]Strain Effect on the Electronic Structures in InP Core/Shell Quantum Dots

〇Jinhyong Lim1, Nobuya Mori1 (1.Osaka Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[25a-12J-6]A preliminary study on electron–modulated-acoustic-phonon interactions in free-standing Si nanosheets

〇Junichi Hattori1, Koichi Fukuda1 (1.AIST)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-12J-7]Device simulation of nano-sheet structure by NEGF method

〇Yasuyuki Ohkura1, Yoshinori Oda1, Daisuke Kosemura1, Masanori Harada1, Hideaki Koike1 (1.AdvanceSoft Co.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-12J-8]Numerical Analysis of Electron Mobility in Nanosheets with Rectangular Cross Section

〇Jo Okada1, Nobuya Mori1 (1.Osaka University)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-12J-9]Initialization of Cellular Automaton Electron Transport Transient Analysis for 2DEG

〇Koichi Fukuda1, Junichi Hattori1 (1.AIST)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[25a-12J-10]Effect of Random Potential on Subthreshold Characteristics of MOSFETs

〇Nobuya Mori1 (1.Osaka Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[25a-12J-11]Exploring the application of quantum computing algorithms for semiconductor device simulations

〇SATOFUMI SOUMA1, Takuya Ishibashi1 (1.Kobe Univ.)
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