[25a-12J-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-12J-2] Reactive Molecular Dynamics Study of Silicon Dioxide Etching by Fluoride Ions

〇(B)Seina Goto^1,2, Naoya Uene², Takashi Tokumasu² (1.School of Eng., Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)

Keywords:

semiconductor,etching