[25a-12J-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[25a-12J-4] Influence of HfN_0.5 gate electrode thickness on the ferroelectric characteristics of hafnium nitride formed on Si(100)

〇KANGBAI LI¹, Ide Akinori¹, Hamada Kaimu¹, Sekiguchi Yuki¹, Ohmi Shun-ichiro¹ (1.Tokyo Inst.)

Keywords:

hafnium nitride,ferroelectric,gate electrode

The ferroelectric HfO₂ thin film has captured considerable interest due to its compatibility with Si and scalability. However, the formation of a SiO₂ interfacial layer leading to depolarization fields and degradation in device characteristics. We have reported that the ferroelectric HfN_1.15 thin film formation on Si substrates without interfacial layer formation. One of the issues of ferroelectric HfN_1.15 thin film is the small memory window (MW).
In this research, we investigated the effect of HfN_0.5 gate electrode thickness on the electrical characteristics of HfN_1.15 thin film to reduce the sputtering damage during the HfN_0.5 gate electrode deposition.