講演情報
[25a-12J-4]Influence of HfN0.5 gate electrode thickness on the ferroelectric characteristics of hafnium nitride formed on Si(100)
〇KANGBAI LI1, Ide Akinori1, Hamada Kaimu1, Sekiguchi Yuki1, Ohmi Shun-ichiro1 (1.Tokyo Inst.)
キーワード：
hafnium nitride、ferroelectric、gate electrode
The ferroelectric HfO2 thin film has captured considerable interest due to its compatibility with Si and scalability. However, the formation of a SiO2 interfacial layer leading to depolarization fields and degradation in device characteristics. We have reported that the ferroelectric HfN1.15 thin film formation on Si substrates without interfacial layer formation. One of the issues of ferroelectric HfN1.15 thin film is the small memory window (MW).
In this research, we investigated the effect of HfN0.5 gate electrode thickness on the electrical characteristics of HfN1.15 thin film to reduce the sputtering damage during the HfN0.5 gate electrode deposition.
In this research, we investigated the effect of HfN0.5 gate electrode thickness on the electrical characteristics of HfN1.15 thin film to reduce the sputtering damage during the HfN0.5 gate electrode deposition.