[25a-12J-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-12J-7] Device simulation of nano-sheet structure by NEGF method

〇Yasuyuki Ohkura¹, Yoshinori Oda¹, Daisuke Kosemura¹, Masanori Harada¹, Hideaki Koike¹ (1.AdvanceSoft Co.)

Keywords:

modeling and simulation of semiconductor devices,nano structures

Three-dimension device simulator using NEGF method is developed and applied to silicon nano-sheet structure.
Relations with drift-diffusion model are discussed.