[25a-12K-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-12K-3] I-V characteristics and scattering times in AlGaAs/GaAs superlattices

〇Nagi Maeda¹, Xiangyu Zhu¹, Naomi Nagai¹, Marc Bescond², Kazuyuki Kuroyama¹, Kazuhiko Hirakawa¹ (1.IIS/INQIE, Univ. of Tokyo,, 2.IN2MP, Aix-Marseille Univ.)

Keywords:

superlattice,bloch oscillations

As one of the approaches to the terahertz (THz) frequency range, more than 50 years have passed since Esaki and Tsu proposed an oscillator utilizing Bloch oscillations of electrons in semiconductor superlattices. However, the realization of Bloch oscillators is still pending due to the existence of high-field domains in the differential negative resistance region, where Bloch gain occurs. In this presentation, we will analyze properties such as the current-voltage (I-V) characteristics of doped semiconductor superlattices and electron scattering times within the superlattice to investigate the issue of high-field domain generation.