Presentation Information
[25a-12K-9]The charge retention characteristics of resistive switching memory using Si/CaF2 quadruple-barrier resonant tunneling structure
〇(M2)Maiko Hoshino1, Ryoya Usami1, Kanta Murakami1, Toya Shioji1, Masahiro Watanabe1 (1.Tokyo Tech)
Keywords:
resistive switching memory,resonant tunneling diode,quantum well
Si/CaF2 heterostructures can be epitaxially grown in layers on Si substrates and are promising materials for resonant tunneling integrated devices with large ON/OFF ratios even at room temperature. We have proposed a non-volatile resistive switching memory based on CaF2/Si/CaF2/Si/CaF2/Si/CaF2/Si/CaF2 quadruple barrier resonant tunneling structure, which is based on charge accumulation in Si quantum wells by inter-subband transitions, and demonstrated basic memory operation and evaluated pulse repetition response characteristics. We have demonstrated the basic memory operation and evaluated the pulse repetition response characteristics. In this talk, charge retention and temperature characteristics of this resistive switching device will be discussed.