[25a-1BJ-1~10] CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[25a-1BJ-1] [The 55th Young Scientist Presentation Award Speech] Disturb-free operation of HfO₂-FeFET by controlling the ferroelectric / dielectric interfacial charge

〇Takamasa Hamai¹, Kunifumi Suzuki¹, Reika Ichihara¹, Yoko Yoshimura¹, Kiwamu Sakuma¹, Matsuo Kazuhiro¹, Shosuke Fujii¹, Masumi Saitoh¹ (1.Kioxia)

Keywords:

ferroelectric transistor,non-volatile memory

FeFET based on ferroelectric HfO2 and Si channel has attracted much attention as an emerging memory. In HfO2-based FeFET, the trapped charges between ferroelectric layer and interfacial SiO2 layer strongly affect cycle endurance and memory window. In this work, we revealed that the volatile component of interfacial trap charges affects the transient behavior of spontaneous polarization. Moreover, we suggested a novel operation scheme that improves disturb (unintended program) immunity, which is a serious problem in memory array, by more than 4 orders of magnitude.