Presentation Information
[25a-1BJ-4]Lifetime improvement of dielectric breakdown in HfO2-based ferroelectric capacitors
by ozone oxidation of the bottom electrode
〇(D)Yuki Itoya1, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1,2 (1.Univ. Tokyo IIS, 2.d.lab)
Keywords:
Ferroelectric,Oxide device
The relationship between electrode materials and ferroelectric properties is being investigated to enhance the endurance of ferroelectric HfO2-based memory devices. In this study, a ferroelectric film was deposited after oxidizing the TiN electrode surface in an atomic layer deposition chamber. A constant voltage stress is applied to the fabricated FE-HfO2 capacitor, and TDDB measurements are conducted. Subsequently, Weibull plot shows that the insulation breakdown lifetime had improved. To investigate the factors contributing to the increased lifetime, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were employed. XRD result shows a change in crystal orientation, while XPS shows that the bulk oxygen vacancy density is not changed significantly.