[25a-1BJ-1~10] CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-1BJ-6] Remanent polarization enhancement in HfO₂ thin films induced by polarization switching under mechanical tensile strain and its possible origin

〇Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)

Keywords:

ferroelectric

In the previous conference, we reported that the remanent polarization (P_sw) enhanced by polarization switching with applying mechanical tensile strain to HfO₂ thin films using 4-point bending and that the relaxation phenomenon was observed in which P_sw returned to the original value after removing the tensile strain. In this report, we discussed the origin of the enhancement of P_sw by the tensile strain through the relationship between the thickness of HfO₂ thin films and the effect of strain and X-ray diffraction (XRD) analysis conducted with applying tensile strain.