[25a-1BJ-1~10] CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-1BJ-9] Dielectric Response Analysis of Hf-Zr-O Ferroelectric Thin Films

〇Shinji Migita¹, Hiroyuki Ota¹, Shutaro Asanuma¹, Yukinori Morita¹ (1.AIST)

Keywords:

ferroelectric,dielectric response analysis,HfO2

HfO₂-based ferroelectric materials are expected to contribute to the realization of highly functional and energy-saving next-generation information processing systems by integrating them into cutting-edge logic and memory circuits. In this study, we show that the frequency dependence of the capacitance of this system is much smaller than that of PZT.