[25a-21C-1~10] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[25a-21C-1] Characterization of a-plane GaN-MCE layer grown on r-plane sapphire substrate using nano-patterned graphene mask

〇Yokoi Ryoya¹, Yanase Yuta¹, Osamura Kohei¹, Maruyama Takahiro¹, Naritsuka Shigeya¹ (1.Meijo Univ.)

Keywords:

GaN,Graphene,MCE