[25a-21C-1~10] 15.4 III-V-group nitride crystals | The 71st JSAP Spring Meeting 2024

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[25a-21C-1~10]15.4 III-V-group nitride crystals

Mon. Mar 25, 2024 9:00 AM - 11:45 AM JST
Mon. Mar 25, 2024 12:00 AM - 2:45 AM UTC

21C (Building No. 2)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Tokyo Univ. of Sci.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[25a-21C-1]Characterization of a-plane GaN-MCE layer grown on r-plane sapphire substrate using nano-patterned graphene mask

〇Yokoi Ryoya¹, Yanase Yuta¹, Osamura Kohei¹, Maruyama Takahiro¹, Naritsuka Shigeya¹ (1.Meijo Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-21C-2]Observation of inverse-critical-thickness epitaxy of InGaN on extremely-thin a-plane GaN template grown on r-plane sapphire substrate with remote epitaxy

〇Yokoi Ryoya¹, Osamura Kohei¹, Yanase Yuta¹, Maruyama Takahiro¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[25a-21C-3]RF-MBE growth of AlGaN on low-dislocation-density AlN template substrates

〇Ryotaro Kasai¹, Ren Tanaka¹, Momoko Deura², Makoto Urushiyama³, Ryota Akaike³, Takao Nakamura^3,4, Hideto Miyake³, Tsutomu Araki¹ (1.Col. of Sci & Eng., Ritsumeikan Univ., 2.R-GIRO, Ritsumeikan Univ., 3.Grad. Sch. of Eng., Mie Univ., 4.MRPCO, Mie Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-21C-4]Dependence of GaN thin films on misoriented sapphire substrates using ECR plasma assisted sputtering method

〇HIRONORI TORII^1,2, Shinsuke Matsui² (1.JSW AFTY Corporation, 2.Chiba Institute of Tech.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-21C-5]Thickness Dependence on Crystallinity of (1122) AlN Fabricated by Sputtering and Annealing Method

〇Ryota Akaike¹, Daiki Kobayashi², Takao Nakamura^3,4, Hideto Miyake⁴ (1.ORIP, Mie Univ., 2.Fac. of Eng., Mie Univ., 3.MRPCO, Mie Univ., 4.Grad. Sch. of Eng., Mie Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[25a-21C-6]Fabrication and characterization of Si-doped GaN films by sputtering

〇Koo Bando¹, Misaki Hidehiko¹, Kano Erisa¹, Ueoka Yoshihiro¹, Masami Mesuda¹ (1.Tosoh Corporation)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-21C-7]Preparation and evaluation of Al co-doped highly n-type GaN via sputtering

〇Yuta Chiba¹, Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-21C-8]Heavy Ge-doping in Al-rich AlGaN using pulsed sputtering

〇Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-21C-9]Growth of nitride thin film on graphene/4H-SiC substrate via sputtering

〇(M1)Minjae Jun¹, Kohei Ueno¹, Ting Pan², Keisuke Takemoto², Kenta Emori², Hiroshi Fujioka¹ (1.Univ. of Tokyo, 2.Nissan Motor Co.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[25a-21C-10]Evaluation of GaN film using post-nitridation type sputtering equipment

〇Fuminori Yoda¹, Atsushi Fujita¹, Yoji Takizawa¹, Shigeki Matsunaka¹, Seiya Nishimura², Atsushi Suzuki², Satoshi Kamiyama³ (1.Shibaura mechatronics, 2.E&E Evolution, 3.Meijo Univ.)

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