[25a-21C-1~10] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-21C-2] Observation of inverse-critical-thickness epitaxy of InGaN on extremely-thin a-plane GaN template grown on r-plane sapphire substrate with remote epitaxy

〇Yokoi Ryoya¹, Osamura Kohei¹, Yanase Yuta¹, Maruyama Takahiro¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

Keywords:

GaN,Graphene,InGaN