[25a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-3] Characterization of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Maciej Matys², Tsutomu Uesugi², Tetsu Kachi², Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

Vertical GaN power device,Junction barrier Schottky rectifiers,Ultra high pressure annealing (UHPA)