[25a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-9] Sn doping into β-Ga₂O₃ by KrF excimer laser

〇Misa Beppu¹, Yohei Tanaka², Keita Katayama¹, Hisato Yabuta^1,2 (1.ISEE, Kyushu Univ., 2.Gigaphoton NEXT GLP, Kyushu Univ.)

Keywords:

laser doping,gallium oxide

Doping techniques are often used for creating ohmic contact with electrodes in semiconductor device fabrication. We have attempted to dope Sn into β-Ga₂O₃ using laser doping technique. There are two features of this technique. First, dopants are expected to be activated simultaneously with dopant implantation. Second, high concentration doping is possible in the ultra-shallow regions from the substrate surface. In this presentation, we report on Sn doping in β-Ga₂O₃ by laser doping method.