[25a-61A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-61A-3] Development of KrF Excimer Laser irradiation Processes for Wide Bandgap Oxide Semiconductor Materials

〇Hisato Yabuta^1,2,3, Yohei Tanaka², Keita Katayama^1,3, Misa Beppu¹, Maiki Sato³, Masayuki Ishihara³, Chihiro Iwamoto⁴, Kaname Imokawa⁵, Taisuke Miura⁵ (1.ISEE Kyushu Univ., 2.NextGLP kyushu Univ., 3.D.Eng. Kyushu Univ., 4.D.Eng. Ibaraki Univ., 5.Gigaphoton Inc.)

Keywords:

Excimer Laser,Laser Annealing,Laser Doping

We have started to investigate the UV laser irradiation process for wide-bandgap oxide materials using a KrF excimer laser for photolithography with high repetition rate (max. 4 kHz). For the solid-phase crystallization of amorphous ITO, it was found that not only the laser-fluence and the number of irradiation pulses but also the repetition rate are important. Also Sn doping into Ga₂O₃ epi-wafers by excimer laser irradiation was succeeded.