The 71st JSAP Spring Meeting 2024
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25a-61A-1~8]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 25, 2024 9:30 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:30 AM - 2:30 AM UTC
61A (Building No. 6)
Yasuji Yamada(Shimane Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[25a-61A-1]Growth rate and electrical properties of atomic layer deposition of In2O3 films with water vapor plasma

〇Souta Takahashi1, Jongho Park1, Takuya Hoshii1, Takanori Takahashi2, Misa Sunagawa3, Yuki Tsuruma3, Shigekazu Tomai3, Kazuo Tsutsui1, Hitoshi Wakabayashi1, Yukiharu Uraoka2, Kuniyuki Kakushima1 (1.Tokyo Tech, 2.NAIST, 3.Idemitsu Kosan Co., Ltd.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-61A-2]Evaluation of ALD polycrystalline indium oxide films using O2 and H2O plasma

〇(M1)JONGHO PARK1, Sota Takahashi1, Takuya Hoshii1, Takanori Takahashi2, Misa Sunagawa3, Yuki Tsuruma3, Shigekazu Tomai3, Kazuo Tsutsui1, Hitoshi Wakabayashi1, Yukiharu Uraoka2, Kuniyuki Kakushima1 (1.Tokyo Tech, 2.NAIST, 3.Idemitsu Kosan Co., Ltd.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-61A-3]Development of KrF Excimer Laser irradiation Processes for Wide Bandgap Oxide Semiconductor Materials

〇Hisato Yabuta1,2,3, Yohei Tanaka2, Keita Katayama1,3, Misa Beppu1, Maiki Sato3, Masayuki Ishihara3, Chihiro Iwamoto4, Kaname Imokawa5, Taisuke Miura5 (1.ISEE Kyushu Univ., 2.NextGLP kyushu Univ., 3.D.Eng. Kyushu Univ., 4.D.Eng. Ibaraki Univ., 5.Gigaphoton Inc.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[25a-61A-4]Properties of Ga-Doped ZnO Thin Films with Thicknesses of 30 nm or less Deposited on Glass Substrates

〇(PC)Rajasekaran Palani1, Hisashi Kitami1,2, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Tetsuya Yamamoto1 (1.Kochi Univ.Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[25a-61A-5]Development of rare metal In-free amorphous SnO2 transparent conductive films and their application in solar cells

〇Takashi Koida1, Takuya Matsui2, Hitoshi Sai2 (1.AIST IECO, 2.AIST RENRC)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-61A-6]Effects of Postannealing on the Properties of Conductive Amorphous W-Doped In2O3 Ultra-Thin Films/glass substrates

〇Tetsuya Yamamoto1, Rajasekaran Palani1, Yugo Okada2, Makoto Maehara2, Hisashi Kitami1,2, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Kimio Kitami2 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-61A-7]Defects and electrical properties of ZnO films deposited with Zn supply

〇Yumika Yamada1,2, Shuhei Funaki2, Yasuji Yamada2 (1.Kobelco Res. Inst. Inc., 2.Shimane Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-61A-8]Analysis of defects dominating carrier recombination in CeO2 single crystal

〇Endong Zhang1, Christoph Brabec2, Masashi Kato1 (1.NITech, 2.FAU)
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