[25a-61A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[25a-61A-4] Properties of Ga-Doped ZnO Thin Films with Thicknesses of 30 nm or less Deposited on Glass Substrates

〇(PC)Rajasekaran Palani¹, Hisashi Kitami^1,2, Shintaro Kobayashi³, Katsuhiko Inaba³, Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ.Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)

Keywords:

ZnO,Thin film,Electrical Properties

We have been investigating the dependence of thickness t on the properties of Ga-doped ZnO (GZO) transparent conductive films. In this work, where we used reactive plasma deposition, the substrate temperature T_s was fixed to be at 200 ℃, and the oxygen (O₂) gas flow rates OFRs were varied from 5 to 25 sccm. At t of 10, 20 and 30 nm, analysis of the data obtained by in-plane X-ray diffraction measurements showed, regardless of the OFR, as follows: the films exhibit a columnar polycrystalline structure with the well-defined c-axis oriented perpendicular to the surface of glass substrate. The above finding is similar to thick films with t ranging from 30 to 200 nm. Note that we have found a strong t dependent the electrical properties. We will study its governing factors.