Presentation Information
[25a-61A-6]Effects of Postannealing on the Properties of Conductive Amorphous W-Doped In2O3 Ultra-Thin Films/glass substrates
〇Tetsuya Yamamoto1, Rajasekaran Palani1, Yugo Okada2, Makoto Maehara2, Hisashi Kitami1,2, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Kimio Kitami2 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
Keywords:
indium oxide,ultra thin film,size effect
We recently have reported the effects of thermal postannealing on the properties of amorphous W-, Ce- or Sn-doped In2O3 thin films, that were deposited on no-intentionally heated alkali-free glass substrates. In this work, W-doped amorphous In2O3 ultra-thin films (thickness t<10 nm) were postannealed under vacuum conditions. After the thermal annealing, we found the improvement in the electrical conductivity for the film becoming polycrystalline. In such films, the mean free path of carrier electrons becomes larger than the film thickness, and a size effect similar to that of thin metal films is observed. We propose the issues to be resolved to improve the carrier transport further through comparison with the in-atmospheric annealed IWO films.