[25a-61B-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[25a-61B-2] GaN selective etching at high substrate temperature

〇Shohei Nakamura^1,2, Atsushi Tanide^1,2, Soichi Nadahara^1,2, Kenji Ishikawa², Masaru Hori² (1.SCREEN Holdings, 2.Nagoya Univ.)

Keywords:

Selective etching,Gallium nitride,High temperature etching

Selective etching of p-type GaN against AlGaN is required for the fabrication of GaN-HEMTs with p-type gates. In previous studies, selective etching using chlorine/oxygen plasma has been reported, but damage formation to the surface of AlGaN has been an issue. In this report, we describe a technique to achieve selective etching and reduction of damage by plasma etching at substrate heating.