The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-61B-1~8]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 25, 2024 9:15 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:15 AM - 2:30 AM UTC
61B (Building No. 6)
Shota Nunomura(AIST)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-61B-1]TiN topographical etching with ECR etching system

〇Koichi Takasaki1, Makoto Satake2, Makoto Miura1 (1.Hitachi High-Tech, 2.Hitachi R&D)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[25a-61B-2]GaN selective etching at high substrate temperature

〇Shohei Nakamura1,2, Atsushi Tanide1,2, Soichi Nadahara1,2, Kenji Ishikawa2, Masaru Hori2 (1.SCREEN Holdings, 2.Nagoya Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-61B-3]Relationship between Surface Temperature and Ultra-fast Etching of Photoresistby Reactive Atmospheric-pressure Thermal Plasma Jet

〇Kyohei Matsumoto1, Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Science and Engineering, Hiroshima University)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-61B-4]Influence of Duty Ratio on Charging Behavior at Capillary Plate Bottom in On-Off and High-Low modulated VHF Plasma

〇Yudai Akatsuka1, Haruka Suzuki1, Makoto Moriyama2, Daiki Iino2, Hiroyuki Fukumizu2, Kazuaki Kurihara2, Hirokata Toyoda1 (1.Nagoya Univ., 2.KIOXIA Corp.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-61B-5]Transient state analysis of charged particle densities in SiO2 etching with pulsed plasma

〇Kohei Fukushima1, Yugo Nakamura1, Kazuki Toji2, Trung Nguyen Tran2, Takayoshi Tsutsumi2, Kenji Ishikawa2, Ken Katahira1 (1.Sony Semiconductor Manufacturing Corp., 2.Nagoya Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[25a-61B-6]High Efficiency Development of Low-GWP Gasses for TSV Process Using Digital Twin

〇Yohei Takakura1, Takumi Shimosuki2, Hiroki Nakamura2, Suzuka Okamoto2, Yasuhiro Nojiri1, Osamu Kumagai1, Hisataka Hayashi1 (1.Daikin Industries, Ltd. Chemical Division, 2.Daikin Industries, Ltd. Technology and Innovation Center)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-61B-7]Development of Dry Etching Gasses Using Digital Twin with Plasma Parameters

〇Hiroki Nakamura1, Takumi Shimosuki1, Kenta Tanaka2, Moe Kaneko2, Yasuhiro Nojiri2, Osamu Kumagai2, Hisataka Hayashi2 (1.Daikin Industries, Ltd. Technology and Innovation Center, 2.Daikin Industries, Ltd. Chemical Division)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-61B-8]Comparative study for electronic and dissociative properties of C3F8 and C3F6

〇Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ.)
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