[25a-61B-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-61B-8] Comparative study for electronic and dissociative properties of C₃F₈ and C₃F₆

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

etching,C3F8,C3F6

Primarily Dissociation routes are discussed by using computational chemistry. Briefly summarized, CF₃⁺ and C₃F₇⁺ ions are predominantly produced in the C₃F₈ ionization threshold region (13.4 eV), whereas, ionization fragmentations do not occur in the C₃F₆ ionization threshold region (11.2 eV) but occur in the slightly higher energy region than 12.8 eV. In the excitation process, C₃F₈ dissociates to C₂F₅ + CF₃ and C₃F₇ + F and C₃F₆ dissociates to C₃F₅ + F. In the electron attachment process, F- ion may be produced at approximately 3.0 eV for the both molecules. The most striking difference is dimer and trimer formation between C₃F₆^- and C₃F₆ molecules, and the similar reaction does not occur between C₃F₈^- and C₃F₈.