[25a-71B-1~9] 17.3 Layered materials

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-71B-1] Device performance of wafer-scale MoS₂ FET grown by MOCVD

〇(D)KEISUKE ATSUMI¹, LI SHUHONG¹, NISHIMURA TOMONORI¹, KANAHASHI KAITO¹, SAKUMA YOSHIKI², NAGASHIO KOSUKE¹ (1.Tokyo Univ., 2.NIMS)

Keywords:

MoS2,Wafer scale,MOCVD

For device integration, many reports have been published on wafer-scale FET fabrication by CVD to suppress the characteristic variation. By Metal-Organic CVD (MOCVD) , which uses gas sources, both of maintaining film uniformity and scaling up can be realized, but there are few research groups and reports. We will report on the evaluation of FET device characteristics by transferring single-layer MoS₂ grown uniformly by MOCVD on sapphire substrate to Si substrate.