The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[25a-71B-1~9]17.3 Layered materials

Mon. Mar 25, 2024 9:00 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:00 AM - 2:30 AM UTC
71B (Building No. 7)
Nobuyuki Aoki(千葉大)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-71B-1]Device performance of wafer-scale MoS2 FET grown by MOCVD

〇(D)KEISUKE ATSUMI1, LI SHUHONG1, NISHIMURA TOMONORI1, KANAHASHI KAITO1, SAKUMA YOSHIKI2, NAGASHIO KOSUKE1 (1.Tokyo Univ., 2.NIMS)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[25a-71B-2]Why does everyone transfer MoS2 grown on sapphire to a Si substrate?
-Decoupling the interaction between MoS2/sapphire-

〇(D)Li Shuhong1, Keisuke Atsumi1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1.Univ. of Tokyo, 2.NIMS)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-71B-3]Photocurrent generation from multi-layer MoS2 deposited by reactive sputtering

〇(P)Myeongok Kim1, Yoshitaka Okada1 (1.RCAST, UTokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-71B-4]Lock-in detection of photo current in field-effect transistors based on transition metal dichalcogenides with the aid of ultraviolet-visible light

〇Hiroki Waizumi1,2,4, Kousuke Sakashita2, Tsuyoshi Takaoka3, Nasiruddin Md.2, Aoi Sato2, Atsushi Ando4, Tadahiro Komeda3 (1.Hokkaido Univ., 2.Tohoku Univ., 3.IMRAM, Tohoku Univ., 4.AIST)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-71B-5]Photo-response of MoS2-FET with CuNPc molecule

〇Tsuyoshi Takaoka1, Kosuke Sakashita2, Hiroki Waizumi3, Yasuyuki Sainoo1, Haotian Liu2, Sushen Chandra Devsharma2, Atsushi Ando4, Tadahiro Komeda1 (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ., 3.Hokkaido Univ., 4.AIST)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[25a-71B-6]Improvement of the p-type thin film MoS2 TFT by Sulfidation

〇Kecheng Li1, Kousaku Shimizu1 (1.Nihon Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-71B-7]Ni/Al2O3/PVD-WS2 Contact Characteristics with Al2O3 Passivation Layer

〇(B)Kaede Teraoka1, Shinya Imai1, Keita Kurohara1, Soma Ito1, Takamasa Kawanago1, Iriya Muneta1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Tokyo Tech)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-71B-8]Enhanced Device Performance of Monolayer WSe2 pMOSFETs by Bi2Te3 vdW contacts

〇WENHSIN CHANG1, S. Hatayama1, Y. Saito1,2, N. Okada1, T. Endo3, Y. Miyata3, T. Irisawa1 (1.AIST, 2.TU, 3.TMU)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-71B-9]Low-contact resistance in NbS2/WSe2 junction for WSe2-pFET

〇(B)Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.AIST, 2.Meiji Univ., 3.MREL)
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