[25a-71B-1~9] 17.3 Layered materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-71B-4] Lock-in detection of photo current in field-effect transistors based on transition metal dichalcogenides with the aid of ultraviolet-visible light

〇Hiroki Waizumi^1,2,4, Kousuke Sakashita², Tsuyoshi Takaoka³, Nasiruddin Md.², Aoi Sato², Atsushi Ando⁴, Tadahiro Komeda³ (1.Hokkaido Univ., 2.Tohoku Univ., 3.IMRAM, Tohoku Univ., 4.AIST)

Keywords:

Transition Metal Dichalcogenide,Field Effect Transistor

Field-effect transistors using transition metal dichalcogenides as materials are expected to be highly sensitive molecular species recognition sensors. If the light-assisted molecular recognition can be extended to the infrared region, even vibrations originating from the functional groups of molecules can be detected as photo-responsive currents. While the photoresponse current generated by infrared light irradiation is small and difficult to detect, we have investigated a method to amplify the photoresponse current using a lock-in amplifier. In this presentation, we first attempted the lock-in detection of the photoresponse current with the aid of ultraviolet and visible light.