Presentation Information
[25a-71B-6]Improvement of the p-type thin film MoS2 TFT by Sulfidation
〇Kecheng Li1, Kousaku Shimizu1 (1.Nihon Univ.)
Keywords:
Two-dimensional semiconductors,Molybdenum sulfide,Thin-film transistors
In recent years, MoS2, one of the layered materials, has been attracting attention. These are usually treated as single crystals, but in this study, thin films were produced by sputtering for the purpose of large-area fabrication. In the previous article, we reported the reason why the MoS2 thin film produced by sputtering has p-type properties. In addition, through oxygenation and sulfidation treatment, we were able to produce a stable TFT with a mobility of 50cm2/Vs or more. In this report, in order to improve the performance of the MoS2 thin film, further details were evaluated and prepared using patterning.