Presentation Information
[25a-P03-2]Non-contact and non-destructive electrical property measurement of InGaN thin films on ScAlMgO4 substrates using THz-TDSE(1)
~ Clarification of background dielectric constant and effective mass ~
〇Kaito Tsuchida1, Touya Yagura1, Yuta Kubo1, Dingding Wang1, Takashi Fujii1,2, Toshiyuki Iwamoto2, Momoko Deura1, Tutomu Araki1 (1.Ritsumei Univ., 2.NIPPO PRECISION)
Keywords:
THz,InGaN,Ellipsometry