Presentation Information
[25a-P03-5]Realization of pseudomorphic GaN growth on AlN by MOVPE method
〇Akira Yoshikawa1,2, Takaharu Nagatomi1, Kazuhiro Nagase1, Sho Sugiyama1, Leo Schowalter2 (1.Asahi Kasei, 2.Nagoya university)
Keywords:
AlN,GaN
In this study, as a result of various condition examinations, we have successfully pseudomorphic GaN growth with a thickness of 20 nm on AlN using the MOVPE method. These results represent the first demonstration of the potential to realize a pseudomorphic AlGaN/GaN structure grwtoh on AlN using the MOVPE mehod, and it is greatly anticipated that this achievement will contribute to the future development of this field.