Presentation Information
[25a-P03-7]Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (III)
〇Dingding Wang1, Kaito Tsuchida1, Takashi Fujii1,3, Momoko Deura2, Toshiyuki Iwamoto3, Atsushi Suyama4, Hitoshi Kawanowa4, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.PNP, 4.ion Technology Center Co., Ltd)
Keywords:
gallium nitride,THz-TDSE,ion implantation