[25p-1BJ-1~7] CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[25p-1BJ-1] Polarization contrast of a HfO₂-based ferroelectric observed through the top electrode: Laser-based photoemission electron microscopy

〇Hirokazu Fujiwara^1,2, Yuki Itoya³, Masaharu Kobayashi^3,4, Cedric Bareille⁵, Shik Shin⁶, Toshiyuki Taniuchi^1,2 (1.GSFS, 2.MIRC, 3.IIS, 4.d.lab, 5.ISSP, 6.Univ. of Tokyo)

Keywords:

ferroelectric capacitor,photoemission electron microscopy,spontaneous polarization imaging

Although a model has been proposed to explain the variation of fatigue and other properties exhibited in HfO₂-based ferroelectric devices by pinning and depinning of spontaneously polarized domains, there have been no reports of experimental visualization of the changes in the underlying defect distribution. In this study, HfO₂-based MFS capacitors were observed by operando laser-based photoemission electron microscopy, and the contrast change corresponding to the polarization inversion was successfully observed. This result is expected to contribute to the improvement of the reliability of HfO₂ devices.