Session Details
[25p-1BJ-1~7]CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5
Mon. Mar 25, 2024 1:00 PM - 2:45 PM JST
Mon. Mar 25, 2024 4:00 AM - 5:45 AM UTC
Mon. Mar 25, 2024 4:00 AM - 5:45 AM UTC
1BJ (Building No. 1)
Takao Shimizu(NIMS)
[25p-1BJ-1]Polarization contrast of a HfO2-based ferroelectric observed through the top electrode: Laser-based photoemission electron microscopy
〇Hirokazu Fujiwara1,2, Yuki Itoya3, Masaharu Kobayashi3,4, Cedric Bareille5, Shik Shin6, Toshiyuki Taniuchi1,2 (1.GSFS, 2.MIRC, 3.IIS, 4.d.lab, 5.ISSP, 6.Univ. of Tokyo)
[25p-1BJ-2]Crystal structure and ferroelectric properties of CeO2-HfO2-ZrO2 thin films
〇(M1)Kouhei Shimonosono1, Yoshiki Maekawa1, Nachi Cyaya1, Okamoto Kazuki1, Wakiko Yamaoka2, Yasushi Kawashima2, Yukari Inoue2, Hiroshi Funakubo1 (1.Tokyo Tech., 2.TDK Corp.)
[25p-1BJ-3]Stabilization of non-equilibrium phase in the growth of ALD deposited non-doped HfO2 thin films
〇Ryuto Ichikawa1, Keigo Naito1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metropolitan Univ.)
[25p-1BJ-4]Fabrication of Thin Ferroelectric HfxAl1-xO2 Films by Flash Lamp Annealing (FLA)
〇Yuma Ueno1, Hideaki Tanimura1, Naoki Sakamoto2, Tomoya Mifune2, Shinichi Kato1, Takumi Mikawa1, Nakashima Seiji2, Hironori Fujisawa2 (1.SCREEN Semiconductor Solutions Co., Ltd., 2.University of Hyogo)
[25p-1BJ-5]Improvement of the polarization properties of Hf0.5Zr0.5O2 thin films formed by Two-step Flash Lamp Annealing (FLA)
〇Hideaki Tanimura1, Yuto Ota3, Yuma Ueno1, Hikaru Kawarazaki1, Shinichi Kato1, Takumi Mikawa1, Yasuo Nara2,3 (1.SCREEN, 2.Tokyo City Univ., 3.Univ. of Hyogo)
[25p-1BJ-6]Effect of resist coating on crystallization of (Hf,Zr)O2 thin films during photolithography process
〇Takeshi Asuka1, Hironori Fujisawa1, Seiji Nakashima1, Ai Osaka1 (1.Univ. Hyogo)
[25p-1BJ-7]Field-induced piezoelectricity of epitaxial YSZ and YHfO2 thin films
〇Ayaka Katsumata1,2, Youkou Shimano1,2, Takahiko Yanagitani1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)