Presentation Information
[25p-52A-2]Electrical properties of β-(Al0.17Ga0.83)2O3 MESFET
〇(M1C)Ryo Morita1, Fenfen Fenda Florena1, Yun Jia1, Aboulaye Traore2,3, Hironori Okumura2, Takeaki Sakurai2 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.J-FAST)
Keywords:
semiconductor,Ga2O3,Al2O3
β-Ga2O3 is a wide-bandgap semiconductor with a breakdown field of 8 MV/cm, making it a promising material for high-power devices. The incorporation of Al atoms to β-Ga2O3 has been reported to increase the breakdown field, leading to expectations of improved device breakdown voltage. While β-(Al,Ga)2O3 channel metal-semiconductor field-effect transistors (MESFETs) have been reported at this stage, their DC characteristics significantly lag behind those of β-Ga2O3 channel MESFETs. In this study, we report an enhancement in DC characteristics by utilizing β-(Al,Ga)2O3 layers with varying impurity concentrations, demonstrating an improvement in performance.