The 71st JSAP Spring Meeting 2024
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[25p-52A-1~6]13.7 Compound and power devices, process technology and characterization

Mon. Mar 25, 2024 1:00 PM - 2:30 PM JST
Mon. Mar 25, 2024 4:00 AM - 5:30 AM UTC
52A (Building No. 5)
Masashi Kato(Nagoya Inst. of Tech.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)English Presentation

[25p-52A-1]Ga2O3 (010) FinFETs with On-Axis (100) Gate Sidewalls

〇Zhenwei Wang1, Sandeep Kumar1, Takafumi Kamimura1, Hisashi Murakami2, Yoshinao Kumagai2, Masataka Higashiwaki1,3 (1.NICT, 2.Tokyo Univ. of Agriculture and Technology, 3.Osaka Metropolitan Univ.)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[25p-52A-2]Electrical properties of β-(Al0.17Ga0.83)2O3 MESFET

〇(M1C)Ryo Morita1, Fenfen Fenda Florena1, Yun Jia1, Aboulaye Traore2,3, Hironori Okumura2, Takeaki Sakurai2 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.J-FAST)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[25p-52A-3]β-Ga2O3 double-implanted MOSFETs with a drain current of 1.36 A and a breakdown voltage of 1 kV

〇Hironobu Miyamoto1, Yuki Koishikawa1, Daiki Wakimoto1, Kohei Sasaki1, Akito Kuramata1 (1.NCT)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[25p-52A-4]Possible reason for remaining oxygen deficiency in β-Ga2O3 near SiO2 interface

〇Koki Katagiri1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[25p-52A-5]In-plane Homogenization of Sheet Resistance of MOSFETs on a wafer using Minimal-Fab Spin-on Dopant Process

〇Shuhei Nakamichi1, Hiroyoshi Hongoh1, Hiroyuki Tanaka2, Fumito Imura1,3, Shiro Hara1,2,3 (1.MinimalFab, 2.AIST, 3.Hundred)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[25p-52A-6]Light-reflecting Distar with Various Heat Dissipation Methods Possible

Ken-ichiro Okamoto1, 〇Kensho Okamoto1, Kazunori Morishita1 (1.Kyoto Univ. Ene.Inst.)
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