Presentation Information
[25p-52A-3]β-Ga2O3 double-implanted MOSFETs with a drain current of 1.36 A and a breakdown voltage of 1 kV
〇Hironobu Miyamoto1, Yuki Koishikawa1, Daiki Wakimoto1, Kohei Sasaki1, Akito Kuramata1 (1.NCT)
Keywords:
semiconductor,wide band gap,transisitor
1.36 A, 1 kV β-Ga2O3 double-implanted (DI) MOS transistors, with an active area of 1.66 mm × 1.31 mm, a cell pitch of 30 µm, a channel length of 2 µm, were fabricated on a 100 mm β-Ga2O3 epitaxial wafer. The transistor’s high-resistive well was formed by Nitrogen ions implantation and n+ source region was formed by Si ions implantation. A threshold voltage of 4.7 V, an on-resistance of 3 Ω(65 mΩ·cm2), a break-down voltage of 1 kV were obtained for the 1.66 mm × 1.31 mm β-Ga2O3 DI-MOS transistors. 30 number of transistors fabricated on the 100 mm β-Ga2O3 epitaxial wafer show good uniformity revealing minimum and maximum drain current of 1.18 A and 1.43 A.