Presentation Information
[25p-52A-4]Possible reason for remaining oxygen deficiency in β-Ga2O3 near SiO2 interface
〇Koki Katagiri1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
Keywords:
Ga2O3,XPS,interface
The electrical properties of SiO2/β-Ga2O3 MOS capacitors are thought to be strongly affected by the defect structure related to oxygen deficiency. In our previous work, we studied the peak area ratio on the low binding energy region of Ga 3d (Ga*) as an indicator of the amount of oxygen deficiency. In this study, we focused on the reaction at SiO2/ Ga2O3 interface, and investigated Ga* changes by using possible kinetics-based model.