[25p-61A-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-13] Fabrication of mesa-shaped Ga₂O₃/Air DBR structures for Wavelength conversion device

〇Shuya Sato¹, Tomoaki Momma¹, Takeki Aikawa¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Inst.)

Keywords:

Gallium oxide,Etching,Distributed Bragg Reflector

Gallium oxide (Ga₂O₃) is expected to be applied to next-generation electronic devices and other devices because of its features such as a wide band gap exceeding 4.5 eV and excellent n-type conductivity controllability. In this study, a 10um high wavelength conversion device with a Ga₂O₃/air distributed Bragg reflector (DBR), which is expected to have broadband and high reflectivity in the visible light region, and nanofluid channels for dye solution injection integrated in the DBR cavity resonator, was fabricated using the hydrogen atmosphere anisotropic thermal etching (HEATE) method, which can etch β-Ga₂O₃ vertically. The wavelength conversion device was designed and fabricated with a 10um high wavelength conversion device.