[25p-61A-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-4] Determining factors of structural stability and electronic structures of InGaZnO₄-derivative crystalline semiconductors

〇Tomoya Suzuki¹, Keisuke Ide¹, Takayoshi Katase¹, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Tokyo Tech.)

Keywords:

IGZO,first-principles calculations,TFT

We analyzed the carrier transport properties and structural stability of In-Ga-Zn-O (IGZO)-derivative homologous series crystals over various compositions using first-principles calculations to develop new high mobility oxide semiconductors for channel materials in thin-film transistors. We also used data analysis to extract controlling factors for the above properties in IGZO-related crystals from the viewpoints of crystal chemistry and electronic structures of constituent elements.