Presentation Information
[25p-61A-7]Characterization of Temperature Dependence of Barrier Height in Ni/β-Ga2O3 SBDs and Measurement of Valence Band Structure of β-Ga2O3 by XPS
〇AKihira Munakata1, Kohei Sasaki2, Kentaro Ema2, Yoshiaki Nakano1, Masaki Kobayashi1, Takuya Maeda1 (1.Univ. of Tokyo, 2.Novel Crystal Technology, Inc.)
Keywords:
gallium oxide,Schottky,barrier height
The temperature dependence of the barrier height was precisely evaluated by internal photoemission (IPE) measurements on Ni/β-Ga2O3 SBDs, and the IPE-derived barrier height showed a decreasing trend with increasing temperature. The results obtained in this study are consistent with the temperature coefficients of the barrier heights obtained from I-V and C-V measurements we reported previously. The valence band structure was also evaluated by XPS.