[25p-61B-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[25p-61B-6] Development of Plasma Enhanced Chemical Vapor Deposition of Yttrium Oxide using Microwave Excited Atmospheric Pressure Plasma Jet

〇(DC)Bat-Orgil Erdenezaya¹, Hirochika Uratani¹, Ruka Yazawa¹, Md. Shahiduzzaman¹, Tetsuya Taima¹, Yusuke Nakano¹, Yasunori Tanaka¹, Tatsuo Ishijima¹ (1.Kanazawa University)

Keywords:

Microwave Atmospheric Pressure Plasma,Yttrium oxide

This study investigated the Y₂O₃ film using MW-APPJ with mist addition. Organic precursor solution was employed as main solvent. Experimental setups involved CVD system with modulated 2.45 GHz microwaves, argon gas were used as carrier and working gas. Key parameter included the average power of 40 to 70 W and quartz substrate heating up to 250^oC.
The films achieved a exceeding deposition rate of 0.05 µm/min. Deposited Y₂O₃ film were analyzed by SEM, XPS, and film profiler.