[25p-61B-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment | The 71st JSAP Spring Meeting 2024

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Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25p-61B-1~9]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 25, 2024 1:00 PM - 3:30 PM JST
Mon. Mar 25, 2024 4:00 AM - 6:30 AM UTC

61B (Building No. 6)

Giichiro Uchida(Meijo Univ)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[25p-61B-1]Change of microscopic surface structures induced by accelerated ion irradiations: molecular dynamics simulations with machine-learning interatomic potentials and the evaluation of persistence diagrams

〇Kousuke Yamamoto¹, Hisashi Higuchi¹, Yumiko Kawano¹, Kazuki Yamada¹, Hu Li² (1.Tokyo Electron Technology Solutions Ltd., 2.Tokyo Electron America, Inc.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[25p-61B-2]Hybrid machine learning model for high-mobility amorphous ITO films fabricated by RF plasma sputtering deposition

〇KUNIHIRO KAMATAKI¹, Naho Itagaki¹, Daisuke Yamashita¹, Takamasa Okumura¹, Naoto Yamashita¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61B-3]Insights into SiO₂ film properties inside three-dimensional structures deposited by plasma-enhanced atomic layer deposition

〇Takashi Hamano¹, Nobuyuki Kuboi¹, Hiroyasu Matsugai¹, Tetsuya Tatsumi¹, Shoji Kobayashi¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corporation)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61B-4]Influence of metal species introduction on the sp3-bond formation in boron nitride films

〇Yuya Asamoto^1,5, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.Shinko Seiki, 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[25p-61B-5]FTIR analysis of carbon films deposited by using tetramethylsilane plasma

Atsuya Kuwada¹, Yuto Oishi¹, Ryohei Higashida², 〇Masanori Shinohara² (1.Grad. schl. of Engineer., Fukuoka Univ., 2.Dep. of Electrical Engineer., Fukuoka Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[25p-61B-6]Development of Plasma Enhanced Chemical Vapor Deposition of Yttrium Oxide using Microwave Excited Atmospheric Pressure Plasma Jet

〇(DC)Bat-Orgil Erdenezaya¹, Hirochika Uratani¹, Ruka Yazawa¹, Md. Shahiduzzaman¹, Tetsuya Taima¹, Yusuke Nakano¹, Yasunori Tanaka¹, Tatsuo Ishijima¹ (1.Kanazawa University)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[25p-61B-7]Improvement of Abrasion-resistant and UV-screening treatment for Polycarbonate treated by the plasma CVD process

〇HIROHARU KOJIMA¹ (1.Hiroshima Pref. Tech. Res. Inst.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[25p-61B-8]Impact of substrate type on diamond synthesis
using microwave hydrogen plasma induced chemical transport

〇Yuma Sakai¹, Takumi Ito¹, Hiroaki Kakiuti¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[25p-61B-9]Effect of Discharge Pulse Length on Crystal Orientation of GaN Films by high-density convergent plasma sputtering device

〇Itsuki Misono¹, Taisei Motomura², Masato Uehara², Tatsuo Tabaru², Tetsuya Okuyama^1,3 (1.NIT Kurume College, 2.AIST, 3.IGSES, Kyushu Univ.)

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