講演情報
[25p-61B-6]Development of Plasma Enhanced Chemical Vapor Deposition of Yttrium Oxide using Microwave Excited Atmospheric Pressure Plasma Jet
〇(DC)Bat-Orgil Erdenezaya1, Hirochika Uratani1, Ruka Yazawa1, Md. Shahiduzzaman1, Tetsuya Taima1, Yusuke Nakano1, Yasunori Tanaka1, Tatsuo Ishijima1 (1.Kanazawa University)
キーワード：
Microwave Atmospheric Pressure Plasma、Yttrium oxide
This study investigated the Y2O3 film using MW-APPJ with mist addition. Organic precursor solution was employed as main solvent. Experimental setups involved CVD system with modulated 2.45 GHz microwaves, argon gas were used as carrier and working gas. Key parameter included the average power of 40 to 70 W and quartz substrate heating up to 250oC.
The films achieved a exceeding deposition rate of 0.05 µm/min. Deposited Y2O3 film were analyzed by SEM, XPS, and film profiler.
The films achieved a exceeding deposition rate of 0.05 µm/min. Deposited Y2O3 film were analyzed by SEM, XPS, and film profiler.