[10a-N105-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N105-1] Effect of substrate surface oxidation on ε-Ga₂O₃/GaN by THVPE method

〇Haruki Kitagawa¹, Kousuke Taguchi², Qiu Ping², Hisashi Murakami^1,2 (1.AIS, Tokyo Univ. Agri. Tech, 2.BASE, Tokyo Univ. Agri. Tech)

Keywords:

semiconductor

In this study, we investigated the growth of epsilon Gallium oxide on GaN substrates with the aim of achieving high growth rates and improving crystal quality. By using GaN substrates, which have a smaller lattice mismatch with epsilon Gallium oxide than c-sapphire substrates, we expect to reduce the strain on the growing crystals and improve crystal quality. In this study, we investigated the effects of the oxidation state of the GaN substrate surface on crystallinity and phase transitions, and report our findings.