The 86th JSAP Autumn Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-N105-1~9]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 10, 2025 9:00 AM - 11:30 AM JST
Wed. Sep 10, 2025 12:00 AM - 2:30 AM UTC
N105 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N105-1]Effect of substrate surface oxidation on ε-Ga2O3/GaN by THVPE method

〇Haruki Kitagawa1, Kousuke Taguchi2, Qiu Ping2, Hisashi Murakami1,2 (1.AIS, Tokyo Univ. Agri. Tech, 2.BASE, Tokyo Univ. Agri. Tech)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-N105-2]Microstructural Characterization of β-Ga2O3 on Off-Axis ScAlMgO4 Substrate Using TEM

〇Taiki Kusayama1, Soma Kato1, Trang Nakamoto2, Kentaro Kaneko3, Makoto Matsukura4, Takahiro Kojima4, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST, 4.OXIDE Co.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-N105-3]Measurement of the diffusion coefficient of n-type dopants in β-Ga2O3

〇Sasuga Hasegawa1, Ryusuke Nakamura1, Takeyuki Suzuki2 (1.Univ. of Shiga Pref., 2.SANKEN Osaka Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-N105-4]Investigation of Al solubility in β-Ga2O3 using the floating zone method

〇Kazune Anai1, Masanori Nagao1, Yuki Maruyama1, Satoshi Watauchi1 (1.Univ. Yamanashi)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-N105-5]Influence of Point Defects on the Electronic Structure of β-Ga2O3

〇Takahiro Kawamura1, Toru Akiyama1, Akira Kusaba2, Yoshihiro Kangawa2 (1.Mie Univ., 2.RIAM, Kyushu Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[10a-N105-6]Evaluation of impurities in Ga2O3 thin films by IR and Raman spectroscopy

〇(P)Shun Ukita1, Hironori Okumura1 (1.Univ. Tsukuba)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-N105-7]Reduction of Impurities in β-Ga2O3 Grown by Liquid Phase Epitaxy

〇Hiroaki Tadokoro1, Zhijin Chen1, Taro Takakura1, Miyuki Miyamoto1, Kousuke Namiki1, Makoto Sasaki1 (1.Mitsubishi Gas Chemical)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-N105-8]Distribution and shape of line shaped voids in β-Ga2O3 grown by the vertical Bridgman method

〇Ukyo Miyagi1, Toshinori Taishi1, Keigo Hoshikawa1 (1.Shinshu Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[10a-N105-9]Evaluation of in-plane anisotropy of β-Ga2O3 single crystals grown by VB method using nanoindentation

〇(M2)Ryuta Ogawa1, Taishi Toshinori1 (1.Shinshu Univ.)
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