Presentation Information
[10a-N105-2]Microstructural Characterization of β-Ga2O3 on Off-Axis ScAlMgO4 Substrate Using TEM
〇Taiki Kusayama1, Soma Kato1, Trang Nakamoto2, Kentaro Kaneko3, Makoto Matsukura4, Takahiro Kojima4, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST, 4.OXIDE Co.)
Keywords:
Crystal growth
We have previously grown single-phase β-Ga2O3 thin films on ScAlMgO4(SAM) substrates by mist CVD method.The grown thin films have in-plane rotation domains and are not single crystals.However, by providing an off-angle to the SAM substrate, we have clarified that the rotation domains of the β-Ga2O3 thin films are suppressed, and that this is effective for controlling the orientation. This time, we evaluated the tendency for the rotation domains of the β-Ga2O3 thin films on SAM substrates to be suppressed by the off-angle through cross-sectional observations using a transmission electron microscope (TEM).