Presentation Information
[10a-N105-7]Reduction of Impurities in β-Ga2O3 Grown by Liquid Phase Epitaxy
〇Hiroaki Tadokoro1, Zhijin Chen1, Taro Takakura1, Miyuki Miyamoto1, Kousuke Namiki1, Makoto Sasaki1 (1.Mitsubishi Gas Chemical)
Keywords:
Ga2O3,Epitaxial Growth
The authors previously proposed liquid phase epitaxy (LPE) as a method for growing β-Ga2O3 epitaxial layers. However, previous studies have reported that β-Ga2O3 epitaxial layers grown using the LPE method contain noticeable amounts of impurities originating from the crucible and raw materials used during the growth process. Therefore, this study focuses on reducing crucible-derived impurities.