[10a-N301-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N301-1] Lasing Characteristics of Optically Pumped InGaN/GaN Thin-Film Core Lasers with GaN/Air-DBRs

〇Sotaro Iijima¹, Yuki Takahashi¹, Shuya Sato¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)

Keywords:

Semiconductor laser